TRANSIENT THERMOELECTRIC EFFECT OF BISMUTH CRYSTAL UNDER STATIC MAGNETIC-FIELD

被引：4
|
作者：
SASAKI, M
TAI, GX
KOYANO, M
NEGISHI, H
BIDADI, H
INOUE, M
机构：
[1] Department of Materials Science, Faculty of Science, Hiroshima University, Higashi-Hiroshima
来源：
PHYSICA B | 1994年 / 194卷 / pt 1期
关键词：
Bismuth crystals - Decay curves - Multicarrier transport - Multiple relaxation times - Static magnetic fields - Transient thermoelectric effects;
D O I：
10.1016/0921-4526(94)90929-6
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
For an extension of a dynamic technique, called the photo-induced ''transient thermoelectric effect (TTE),'' to study multicarrier transport in various solids, we have studied the effect of static magnetic fields on the TTE for bismuth crystals as a test sample. The TTE signals under magnetic fields show an asymmetric behavior for the reversal of the magnetic field direction. The analysis of TTE decay curves gives multiple relaxation times corresponding to different types of electrons, which show anomalous magnetic field dependence.
引用
收藏
页码：1199 / 1200
页数：2
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