NEW HETEROJUNCTION DEVICES BY BAND-GAP ENGINEERING

被引:25
|
作者
CAPASSO, F
机构
来源
PHYSICA B & C | 1985年 / 129卷 / 1-3期
关键词
D O I
10.1016/0378-4363(85)90557-1
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:92 / 106
页数:15
相关论文
共 50 条
  • [1] NEW HETEROJUNCTION DEVICES BY BAND-GAP ENGINEERING.
    Capasso, Federico
    1600, (129 B-C): : 1 - 3
  • [2] BAND-GAP ENGINEERING FOR NEW PHOTONIC AND ELECTRONIC DEVICES
    CAPASSO, F
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1988, 265 (1-2): : 112 - 119
  • [3] BAND-GAP ENGINEERING FOR NEW PHOTONIC AND ELECTRONIC DEVICES.
    Capasso, Federico
    Nuclear instruments and methods in physics research, 1987, A265 (1-2): : 112 - 119
  • [4] BAND-GAP ENGINEERING - FROM PHYSICS AND MATERIALS TO NEW SEMICONDUCTOR-DEVICES
    CAPASSO, F
    SCIENCE, 1987, 235 (4785) : 172 - 176
  • [6] ON THE ADJUSTABILITY OF THE ABRUPT HETEROJUNCTION BAND-GAP DISCONTINUITY
    BAUER, RS
    SANG, HW
    SURFACE SCIENCE, 1983, 132 (1-3) : 479 - 504
  • [7] NONPARABOLICITY AS A TOOL IN BAND-GAP ENGINEERING
    LANDSBERG, PT
    YU, YJ
    JOURNAL OF APPLIED PHYSICS, 1988, 63 (05) : 1789 - 1791
  • [8] Wide band-gap power semiconductor devices
    Millan, J.
    IET CIRCUITS DEVICES & SYSTEMS, 2007, 1 (05) : 372 - 379
  • [9] Low band-gap polymeric photovoltaic devices
    Shaheen, SE
    Vangeneugden, D
    Kiebooms, R
    Vanderzande, D
    Fromherz, T
    Padinger, F
    Brabec, CJ
    Sariciftci, NS
    SYNTHETIC METALS, 2001, 121 (1-3) : 1583 - 1584
  • [10] Band-gap engineering of SnO2
    Mounkachi, O.
    Salmani, E.
    Lakhal, M.
    Ez-Zahraouy, H.
    Hamedoun, M.
    Benaissa, M.
    Kara, A.
    Ennaoui, A.
    Benyoussef, A.
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2016, 148 : 34 - 38