THEORETICAL-STUDY OF STRUCTURES AND GROWTH OF STRAINED SI/GE SUPERLATTICES

被引：12
|
作者：
ZI, J [1 ]
ZHANG, KM [1 ]
XIE, XD [1 ]
机构：
[1] CHINESE CTR ADV SCI & TECHNOL,WORLD LAB,BEIJING,PEOPLES R CHINA
来源：
APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 02期
关键词：
D O I：
10.1063/1.103972
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The geometry structures of strained (Si)n/(Ge)n (1≤n≤6) superlattices grown pseudomorphically on (001) oriented Si 1-xGex (0≤x≤1) substrates are studied. The calculations indicate that with proper choice of the Ge composition factor x symmetrically strained superlattices can be approximately obtained, which might render the growth of a superlattice with larger thickness possible.
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页码：165 / 167
页数：3
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