CATHODOLUMINESCENCE CONTRAST OF LOCALIZED DEFECTS .2. DEFECT INVESTIGATION

被引:0
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作者
PEY, KL [1 ]
PHANG, JCH [1 ]
CHAN, DSH [1 ]
机构
[1] NATL UNIV SINGAPORE,FAC ENGN,CTR INTEGRATED CIRCUIT FAILURE ANAL & RELIABIL,DEPT ELECT ENGN,SINGAPORE 0511,SINGAPORE
关键词
CATHODOLUMINESCENCE; CONTRAST; DEFECTS; SCANNING ELECTRON MICROSCOPE; SEMICONDUCTORS; DISLOCATIONS; SUBSURFACE DEFECTS;
D O I
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中图分类号
TH742 [显微镜];
学科分类号
摘要
Cathodoluminescence contrast from defects with different geometrical and electronic properties have been studied using the numerical model developed in Part I. The contrast of a localized subsurface defect exhibits a maxima at a specific beam energy E(max) which corresponds to the depth of the defect. The contrast of a dislocation which intersects the top surface perpendicularly is a decreasing function of beam energy. The differences in the image profiles of the two different kinds of defects allow the two types of imperfections to be distinguished. In addition, the resolution of a subsurface defect at beam energies lower than E(max) is only a function of defect size and is insensitive to the defect strength. The defect depth, size and strength can therefore be extracted sequentially. The extension of the model to the investigation of complex or multiple defects such as ''dot and halo'' contrast is also illustrated.
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页码:367 / 380
页数:14
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