SILICON-ON-INSULATOR - MATERIALS ASPECTS AND TECHNOLOGICAL APPLICATIONS

被引：1
|
作者：
BOMCHIL, G
机构：
[1] Centre National di Etudes des Telecommunications, 38243 Meylan Cedex
来源：
VACUUM | 1990年 / 41卷 / 4-6期
关键词：
D O I：
10.1016/0042-207X(90)93782-E
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Materials and techniques to obtain silicon-on-insulator structures are presented including a brief discussion on the physical principles of each technique. The advantages and limitations of the various silicon-on-insulator materials for technological applications in the development of future electron devices and Very Large Scale Integrated circuits are discussed. © 1990.
引用
收藏
页码：781 / 783
页数：3
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