DEEP LEVEL IMPURITIES IN SEMICONDUCTORS

被引：152
作者：
GRIMMEISS, HG [1 ]
机构：
[1] LUND INST TECHNOL,DEPT SOLID STATE PHYS,S-22007 LUND 7,SWEDEN
来源：
ANNUAL REVIEW OF MATERIALS SCIENCE | 1977年 / 7卷
关键词：
D O I：
10.1146/annurev.ms.07.080177.002013
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：341 / 376
页数：36
相关论文
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