REFLECTANCE MODULATION AT A GERMANIUM SURFACE

被引：54

作者：

BATZ, B

机构：

来源：

SOLID STATE COMMUNICATIONS | 1966年 / 4卷 / 05期

关键词：

D O I：

10.1016/0038-1098(66)90037-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：241 / &

相关论文

共 6 条

[1] HIGH-SENSITIVITY PIEZOREFLECTIVITY [J].

ENGELER, WE ;

FRITZSCHE, H ;

GARFINKEL, M ;

TIEMANN, JJ .

PHYSICAL REVIEW LETTERS, 1965, 14 (26) :1069-+

[2] DEPENDENCE OF OPTICAL CONSTANTS OF SILICON ON UNIAXIAL STRESS [J].

GOBELI, GW ;

KANE, EO .

PHYSICAL REVIEW LETTERS, 1965, 15 (04) :142-&

[3] FIELD EFFECT OF REFLECTIVITY IN GERMANIUM [J].

SERAPHIN, BO ;

HESS, RB ;

BOTTKA, N .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (07) :2242-&

[4] FRANZ-KELDYSH EFFECT ABOVE FUNDAMENTAL EDGE IN GERMAINIUM [J].

SERAPHIN, BO ;

HESS, RB .

PHYSICAL REVIEW LETTERS, 1965, 14 (05) :138-&

[5]

SERAPHIN BO, 1964, 1964 P INT C PHYS SE, P165

[6] ELECTROREFLECTANCE AT A SEMICONDUCTOR-ELECTROLYTE INTERFACE [J].

SHAKLEE, KL ;

POLLAK, FH ;

CARDONA, M .

PHYSICAL REVIEW LETTERS, 1965, 15 (23) :883-&