MATERIALS FOR SUPERCONDUCTING ELECTRONICS - IN-SITU GROWTH OF PRGAO3 THIN-FILMS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

被引:9
|
作者
HAN, B [1 ]
NEUMAYER, DA [1 ]
SCHULZ, DL [1 ]
HINDS, BJ [1 ]
MARKS, TJ [1 ]
机构
[1] NORTHWESTERN UNIV,TECHNOL CTR SUPERCONDUCT,EVANSTON,IL 60208
关键词
D O I
10.1116/1.578568
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Phase-pure thin films of the YBCO, BSCCO, TBCCO lattice-matched and low dielectric-loss perovskite insulator PrGaO3 have been grown in situ on single-crystal (110) LaAlO3, (001) SrTiO3, and (001) MgO substrates by metalorganic chemical vapor deposition (MOCVD). Films were grown at temperatures between 750 and 800-degrees-C using the volatile metalorganic beta-diketonate precursors M(dpm)3 (M = Pr, Ga, and dpm = dipivaloylmethanate). As assessed by x-ray diffraction, the films grow epitaxially on LaAlO3 and SrTiO3 substrates with a high degree of (001) and/or (110) plane orientation parallel to the substrate surface. The films grown on MgO substrates are polycrystalline. Scanning electron microscopy reveals that the MOCVD-derived PrGaO3 films have smooth, featureless surfaces on all three kinds of substrates.
引用
收藏
页码:1431 / 1434
页数:4
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