HIGH-POWER 0.98-MU-M STRAINED-LAYER QUANTUM-WELL LASERS WITH INGAP CLADDING

被引：2

作者：

IJICHI, T

OHKUBO, M

IKETANI, A

KIKUTA, T

机构：

[1] The Furukawa Electric Co., Ltd., Yokohama, 220, 2—4—3 Okano, Nishi-ku

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 1994年 / 7卷 / 03期

关键词：

STRAINED-LAYER QUANTUM-WELL LASER; 0.98-MU-M LASER; RIDGE WAVE-GUIDE LASER; HIGH-POWER LASER; OPTICAL-FIBER AMPLIFIER;

D O I：

10.1002/mop.4650070313

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Recent progress on InGaAs/GaAs strained-layer quantum-well lasers using InGaP cladding are reported. The 0.98-, 1.02-, and 1.06-mu m polyimide buried ridge waveguide lasers fabricated by using selective chemical etching are applicable to high-power use. Further, employing InGaAsP layers lattice matched to GaAs enables the realization of GRIN-SCH lasers, which is expected to be a technique to improve the laser characteristics. (C) 1994 John Wiley and Sons. Inc.

引用

页码：139 / 143

页数：5

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