INTERACTION BETWEEN THERMAL AND RADIATION DEFECTS IN SILICON

被引：0
|
作者：
PANOV, VI [1 ]
SMIRNOV, LS [1 ]
TISHKOVSKII, EG [1 ]
机构：
[1] ACAD SCI USSR,SEMICOND PHYS INST,NOVOSIBIRS,USSR
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1975年 / 9卷 / 08期
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D O I：
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
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页码：1041 / 1042
页数：2
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