CONDUCTIVITY OF AMORPHOUS-SILICON DOPED BY THE IMPLANTATION OF PHOSPHORUS

被引：0

作者：

MASHIN, AI

PAVLOV, PV

KHOKHLOV, AF

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1982年 / 16卷 / 03期

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D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：360 / 361

页数：2

共 50 条

[1] LIGHT-INDUCED CONDUCTIVITY CHANGES IN PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON
YOON, JH
KIM, MS
LEE, CC
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1989, 114 : 636 - 638
[2] THICKNESS AND TEMPERATURE-DEPENDENCE OF THE CONDUCTIVITY OF PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON
AST, DG
BRODSKY, MH
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 41 (03): : 273 - 285
[3] FREQUENCY-DEPENDENT CONDUCTIVITY IN BORON-DOPED AND PHOSPHORUS-DOPED AMORPHOUS-SILICON FILMS
GRASSO, V
GIORGIANNI, U
NERI, F
TRUSSO, S
THIN SOLID FILMS, 1992, 209 (01) : 97 - 103
[4] RECOMBINATION CENTERS IN PHOSPHORUS DOPED HYDROGENATED AMORPHOUS-SILICON
WRONSKI, CR
ABELES, B
TIEDJE, T
CODY, GD
SOLID STATE COMMUNICATIONS, 1982, 44 (10) : 1423 - 1426
[5] IMPLANTATION DAMAGE IN AMORPHOUS-SILICON
MULLER, G
LECOMBER, PG
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1981, 43 (03): : 419 - 431
[6] PHOTOSENSITIVITY AND CONDUCTIVITY OF AMORPHOUS-SILICON DOPED WITH ISOVALENT GERMANIUM IMPURITIES
KHOKHLOV, AF
ERSHOV, AV
MASHIN, AI
MORDVINOVA, YA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (10): : 1156 - 1157
[7] LOW-TEMPERATURE CONDUCTIVITY OF HEAVILY DOPED AMORPHOUS-SILICON
ALESHIN, AN
DVURECHENSKII, AV
IONOV, AN
RYAZANTSEV, IA
SHLIMAK, IS
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (07): : 759 - 761
[8] THE INCORPORATION OF PHOSPHORUS IN AMORPHOUS-SILICON
LEIDICH, D
LINHART, E
NIEMANN, E
GRUENINGER, HW
FISCHER, R
ZEYFANG, RR
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 613 - 616
[9] PHOSPHORUS DIFFUSION IN AMORPHOUS-SILICON
KHOKHLOV, AF
PANTELEEV, VA
DOBROKHOTOV, EV
MAKSIMOV, GA
SIDOROV, VA
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 81 (01): : K15 - K18
[10] THICKNESS DEPENDENCE OF THE PHOTOCONDUCTIVITY OF PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON
SOLOMON, I
BRODSKY, MH
JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) : 4548 - 4549

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