SEGREGATION AND TRAPPING OF ERBIUM DURING SILICON MOLECULAR-BEAM EPITAXY

被引：46
|
作者：
SERNA, R [1 ]
LOHMEIER, M [1 ]
ZAGWIJN, PM [1 ]
VLIEG, E [1 ]
POLMAN, A [1 ]
机构：
[1] FOM,INST ATOM & MOLEC PHYS,1098 SJ AMSTERDAM,NETHERLANDS
来源：
APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 11期
关键词：
D O I：
10.1063/1.113209
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Erbium surface segregation is observed during growth of Er-doped Si by molecular beam epitaxy on Si(100) at 600°C. Once a critical Er surface areal density of 2×1014Er/cm2 is reached, enhanced Er trapping is observed, possibly due to the formation of silicide precipitates. Er segregation on Si(100) is fully avoided when growth is performed in an oxygen background pressure of ∼10-10mbar, due to the formation of Er-O complexes. No Er segregation is observed on Si(111), which is attributed to the formation of epitaxial Er3Si5 precipitates.© 1995 American Institute of Physics.
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页码：1385 / 1387
页数：3
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