METAL-INSULATOR-TRANSITION IN THE 2-BAND HUBBARD-MODEL

被引:3
|
作者
BARFORD, W [1 ]
GAGLIANO, ER [1 ]
VERMEULEN, C [1 ]
机构
[1] UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801
来源
PHYSICAL REVIEW B | 1995年 / 51卷 / 20期
关键词
D O I
10.1103/PhysRevB.51.14693
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Calculations of the single-particle spectral function for the two-band Hubbard model as a function of doping and nearest-neighbor Coulomb repulsion are performed on finite-size clusters. It is shown that for hole doping the effect of the nearest-neighbor Coulomb repulsion leads to the effective pinning of the Fermi energy, and to the creation of new states in the charge-transfer gap. For electron doping, however, the model behaves as a one-band Hubbard model with the Fermi energy moving into the conduction band. The results of this calculation are in qualitative agreement with some of the spectroscopic studies of the electronic structure at the Fermi energy of the high-temperature cuprate superconductors. © 1995 The American Physical Society.
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页码:14693 / 14696
页数:4
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