PENDELLOSUNG MEASUREMENT OF (222) REFLECTION IN SILICON

被引：12

作者：

FEHLMANN, M ^{[1
]}

FUJIMOTO, I ^{[1
]}

机构：

[1] NIPPON HOSO KYOKAI,BROADCASTING SCI RES LABS,1-10-11 KINUTA,SETAGAYA 157,TOKYO,JAPAN

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1975年 / 38卷 / 01期

关键词：

D O I：

10.1143/JPSJ.38.208

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：208 / 215

页数：8

共 19 条

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[3] A STUDY OF (222) FORBIDDEN REFLECTION IN GERMANIUM AND SILICON [J].

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MERLINI, A .

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[4]

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[5] COVALENT BOND IN SILICON [J].

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[6] A GENERAL STRUCTURE FACTOR FORMALISM FOR INTERPRETING ACCURATE X-RAY AND NEUTRON DIFFRACTION DATA [J].

DAWSON, B .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1967, 298 (1454) :255-&

[7] ABSOLUTE X-RAY SCATTERING FACTORS OF SILICON AND GERMANIUM [J].

DEMARCO, JJ ;

WEISS, RJ .

PHYSICAL REVIEW, 1965, 137 (6A) :1869-&

[8] TEMPERATURE AND PRESSURE-DEPENDENCE OF SI(222) FORBIDDEN REFLECTION AND VIBRATION OF BONDING CHARGE [J].

FUJIMOTO, I .

PHYSICAL REVIEW B, 1974, 9 (02) :591-599

[9]

GOTTLICHER S, 1959, Z ELEKTROCHEM, V63, P891

[10]

HEWAT AW, 1969, ACTA CRYSTALL A-CRYS, VA 25, pS213

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