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- [8] THE ANNEALING BEHAVIOR OF ARSENIC-IMPLANTED SILICON BETWEEN 600-DEGREES-C AND 800-DEGREES-C CHARACTERIZED BY CARRIER DENSITY PROFILES PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 82 (01): : 149 - 155
- [9] AN ONP INVESTIGATION OF DEEP LEVEL DEFECTS PRODUCED BY HEAT-TREATMENT AT 600-DEGREES-C AND 800-DEGREES-C IN CZ-SI PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1989, 114 (01): : 233 - 245