DIFFUSION LAYERS AND THE SCHOTTKY-BARRIER HEIGHT IN NICKEL SILICIDE-SILICON INTERFACES

被引：68
作者：
CHANG, YJ
ERSKINE, JL
机构：
来源：
PHYSICAL REVIEW B | 1983年 / 28卷 / 10期
关键词：
D O I：
10.1103/PhysRevB.28.5766
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
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页码：5766 / 5773
页数：8
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