FORMATION AND ANNEALING OUT OF RADIATION DEFECTS IN P-SI(P,PT)

被引:0
|
作者
YUNUSOV, MS
AKHMADALIEV, A
SABIROV, SS
机构
关键词
D O I
暂无
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:346 / 347
页数:2
相关论文
共 50 条
  • [1] Special features of annealing of radiation defects in irradiated p-Si crystals
    Pagava, T. A.
    SEMICONDUCTORS, 2007, 41 (06) : 631 - 633
  • [2] Special features of annealing of radiation defects in irradiated p-Si crystals
    T. A. Pagava
    Semiconductors, 2007, 41 : 631 - 633
  • [3] Interaction of hydrogen with radiation defects in p-Si crystals
    Feklisova, OV
    Yarykin, NA
    Yakimov, EB
    Weber, J
    SEMICONDUCTORS, 2001, 35 (12) : 1355 - 1360
  • [4] Interaction of hydrogen with radiation defects in p-Si crystals
    O. V. Feklisova
    N. A. Yarykin
    E. B. Yakimov
    J. Weber
    Semiconductors, 2001, 35 : 1355 - 1360
  • [5] DLTS INVESTIGATION ON THE INTERACTION OF RADIATION DEFECTS WITH THERMAL DEFECTS IN CZOCHRALSKI P-SI
    SCHMALZ, K
    BOLOTOV, VV
    RICHTER, H
    TITTELBACHHELMRICH, K
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 95 (01): : K15 - K20
  • [6] Nanoelectrical and Nanoelectrochemical Imaging of Pt/p-Si and Pt/p+-Si Electrodes
    Jiang, Jingjing
    Huang, Zhuangqun
    Xiang, Chengxiang
    Poddar, Rakesh
    Lewerenz, Hans-Joachim
    Papadantonakis, Kimberly M.
    Lewis, Nathan S.
    Brunschwig, Bruce S.
    CHEMSUSCHEM, 2017, 10 (22) : 4657 - 4663
  • [7] Design, fabrication and testing of Al/p-Si p-Si Schottky and pn junctions for radiation studies
    Villani, E. Giulio
    Zhang, Dengfeng
    Malik, Adnan
    Vickey, Trevor
    Chen, Yebo
    Kurth, Matthew G.
    Liu, Peilian
    Zhu, Hongbo
    Koffas, Thomas
    Klein, Christoph Thomas
    Vandusen, Robert
    Aiton, Rodney
    Mccormick, Angela
    Tarr, Garry
    JOURNAL OF INSTRUMENTATION, 2024, 19 (07):
  • [8] On the thermostability of electrical properties of p-Si<P, Ni> and p-Si<P, Cu>
    Makhkamov Sh.
    Karimov M.
    Kurbanov A.O.
    Makhmudov Sh.A.
    Karakhodzhaev A.K.
    Russian Physics Journal, 2005, 48 (12) : 1298 - 1301
  • [9] DEFECTS IN P-SI BOMBARDED AT 77-K - ENERGY-SPECTRUM AND ANNEALING KINETICS
    ABDULLIN, KA
    MUKASHEV, VN
    SEMICONDUCTORS, 1994, 28 (10) : 1012 - 1017
  • [10] Effects of Ar post-annealing on the electrical properties of Pt/YMnO3/p-Si and Pt/YMnO3/Y2O3/p-Si
    Yun, KY
    Kim, JS
    Yoon, SG
    Cheon, CI
    INTEGRATED FERROELECTRICS, 2001, 40 (1-5) : 1561 - 1568