LUMINESCENCE FROM GAP CONTAINING SILICON

被引：41

作者：

LORENZ, MR

PILKUHN, MH

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1967年 / 38卷 / 01期

关键词：

D O I：

10.1063/1.1709011

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：61 / &

共 15 条

[1] STATISTICAL MECHANICS OF DILUTE SOLID SOLUTIONS [J].

BREBRICK, RF .

JOURNAL OF APPLIED PHYSICS, 1962, 33 (01) :422-&

[2] APPARATUS FOR LIGHT EFFICIENCY MEASUREMENT [J].

CHEROFF, G ;

TRIEBWASSER, S ;

LANZA, C .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1963, 34 (10) :1138-&

[3] FORMATION OF BUILT-IN LIGHT-EMITTING JUNCTIONS IN SOLUTION-GROWN GAP CONTAINING SHALLOW DONORS AND ACCEPTORS [J].

FOSTER, LM ;

PLASKETT, TS ;

SCARDEFI.JE .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1966, 10 (02) :114-&

[4] LIGHT EMISSION FROM FORWARD BIASED P-N JUNCTIONS IN GALLIUM PHOSPHIDE [J].

GERSHENZON, M ;

MIKULYAK, RM .

SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) :313-&

[5] ELECTROLUMINESCENCE AT P-N JUNCTIONS IN GALLIUM PHOSPHIDE [J].

GERSHENZON, M ;

MIKULYAK, RM .

JOURNAL OF APPLIED PHYSICS, 1961, 32 (07) :1338-&

[6]

GRIMMEISS HG, 1960, PHILIPS RES REP, V15, P290

[7] PREPARATION AND PROPERTIES OF SOLUTION-GROWN EPITAXIAL P-N JUNCTIONS IN GAP [J].

LORENZ, MR ;

PILKUHN, M .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (11) :4094-&

[8] HALL-EFFECT MEASUREMENTS OF N-TYPE GALLIUM PHOSPHIDE [J].

MONTGOME.HC ;

FELDMANN, WL .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) :3228-&

[9]

NELSON H, 1963, RCA REV, V24, P603

[10] SEGREGATION OF SILICON IN GALLIUM PHOSPHIDE [J].

RUBENSTEIN, M .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (10) :1010-+

← 1 2 →