RADIATIVE RECOMBINATION BETWEEN DEEP-DONOR-ACCEPTOR PAIRS IN GAP

被引:81
作者
GERSHENZ.M
TRUMBORE, FA
MIKULYAK, RM
KOWALCHI.M
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10.1063/1.1703082
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O59 [应用物理学];
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页码:1528 / &
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共 25 条
[1]  
ALLEN JW, 1962, SOLID STATE ELECTRON, V6, P95
[2]   MIRROR ABSORPTION AND FLUORESCENCE IN ZNTE [J].
DIETZ, RE ;
HOPFIELD, JJ ;
THOMAS, DG .
PHYSICAL REVIEW LETTERS, 1962, 8 (10) :391-&
[3]  
GERSHENZON HC, TO BE PUBLISHED
[4]   LIGHT EMISSION FROM FORWARD BIASED P-N JUNCTIONS IN GALLIUM PHOSPHIDE [J].
GERSHENZON, M ;
MIKULYAK, RM .
SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) :313-&
[5]   ELECTROLUMINESCENCE AT P-N JUNCTIONS IN GALLIUM PHOSPHIDE [J].
GERSHENZON, M ;
MIKULYAK, RM .
JOURNAL OF APPLIED PHYSICS, 1961, 32 (07) :1338-&
[6]   ELECTROLUMINESCENT RECOMBINATION NEAR THE ENERGY GAP IN GAP DIODES [J].
GERSHENZON, M ;
MIKULYAK, RM ;
LOGAN, RA ;
FOY, PW .
SOLID-STATE ELECTRONICS, 1964, 7 (02) :113-124
[7]  
GERSHENZON M, TO BE PUBLISHED
[8]  
GERSHENZON M, 1962, 1962 P INT C PHYS SE, P752
[9]  
GRIMMEIS HG, 1961, J APPL PHYS, V32, P2133
[10]   ANALYSIS OF P-N LUMINESCENCE IN ZN-DOPED GAP [J].
GRIMMEISS, H ;
KOELMANS, H .
PHYSICAL REVIEW, 1961, 123 (06) :1939-&