共 50 条
- [2] INFLUENCE OF MBE GROWTH-CONDITIONS ON PERSISTENT PHOTOCONDUCTIVITY EFFECTS IN N-ALGAAS AND SELECTIVELY DOPED GAAS/ALGAAS HETEROSTRUCTURES JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (06): : L408 - L410
- [5] MODULATION DOPED N-ALGAAS/GAAS HETEROSTRUCTURES GROWN BY FLOW-RATE MODULATION EPITAXY JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (06): : L513 - L515
- [6] IMPROVED 2DEG MOBILITY IN INVERTED GAAS/N-ALGAAS HETEROSTRUCTURES GROWN BY MBE JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08): : L573 - L575
- [7] PERSISTENT PHOTOCONDUCTIVITY IN ALGAAS-GAAS HETEROSTRUCTURES JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02): : 167 - 169
- [8] Photoellipsometry analysis of n-AlGaAs/GaAs heterojunction structures Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1995, 34 (5 A): : 2207 - 2212
- [9] PHOTOELLIPSOMETRY ANALYSIS OF N-ALGAAS/GAAS HETEROJUNCTION STRUCTURES JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (5A): : 2207 - 2212
- [10] MODULATION DOPED n-AlGaAs/GaAs HETEROSTRUCTURES GROWN BY FLOW-RATE MODULATION EPITAXY. Japanese Journal of Applied Physics, Part 2: Letters, 1986, 25 (06): : 513 - 515