PHONON-ASSISTED ELECTROABSORPTION

被引：28

作者：

CHESTER, M

FRITSCHE, L

机构：

来源：

PHYSICAL REVIEW | 1965年 / 139卷 / 2A期

关键词：

D O I：

10.1103/PhysRev.139.A518

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：A518 / &

共 22 条

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[7]

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[8] DIRECT OBSERVATION OF PHONONS IN SILICON BY ELECTRIC-FIELD-MODULATED OPTICAL ABSORPTION [J].

FROVA, A ;

HANDLER, P .

PHYSICAL REVIEW LETTERS, 1965, 14 (06) :178-&

[9] SHIFT OF OPTICAL ABSORPTION EDGE BY ELECTRIC FIELD - MODULATION OF LIGHT IN SPACE-CHARGE REGION OF GE P-N JUNCTION ( 90 PERCENT MODULATION AT LAMBDA - 1.56 MU E ) [J].

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[10]

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