ROUGHNESS AT THE INTERFACE OF THIN INP/INAS QUANTUM-WELLS

We investigated the interface roughness of InP/As quantum wells using photoluminescence and secondary ion mass spectroscopy. Typical photoluminescence spectra consist of multiple lines. The energies of the observed peaks have a remarkable behavior; namely, both the peak energies and the separations between peaks change from sample to sample. We discuss the interpretation of the observed emission lines in connection with questions such as interface roughness, island formation and lateral confinement. We also discuss the strong influence of parameters such as the growth temperature and the substrate orientation on the interface roughness.