INCREASED RADIATION HARDNESS OF GAAS LASER-DIODES AT HIGH-CURRENT DENSITIES

被引：15

作者：

BARNES, CE ^{[1
]}

机构：

[1] SANDIA LABS,ALBUQUERQUE,NM 87115

来源：

JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 08期

关键词：

D O I：

10.1063/1.1663806

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3485 / 3489

页数：5

共 11 条

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[9] LARGE-OPTICAL-CAVITY (A1GA)AS-GAAS HETEROJUNCTION LASER DIODE - THRESHOLD AND EFFICIENCY [J].

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