THE TEMPERATURE-DEPENDENCE OF THE BAND-GAPS IN INP, INAS, INSB, AND GASB

被引：49
|
作者：
ZOLLNER, S
GOPALAN, S
CARDONA, M
机构：
[1] Max-Planck-Institut für Festkörperforschung, D-7000 Stuttgart 80
来源：
SOLID STATE COMMUNICATIONS | 1991年 / 77卷 / 07期
关键词：
D O I：
10.1016/0038-1098(91)90725-B
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We calculate the dependence of the direct band gaps E0 on temperature in the narrow-gap materials InP, InAs, InSb, and GaSb. Our calculation is based on the Allen-Heine approach and includes two effects: (i) thermal expansion and (ii) electron-phonton interaction. The latter when expanded in perturbation theory up to second order in the atomic displacements includes two terms: Debye-Waller and self-energy (or Fan-) terms. The results obtained by including all these terms within the rigid-pseudoion model compare reasonably well with available experimental results.
引用
收藏
页码：485 / 488
页数：4
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