ELECTRONIC SURFACE-STATES ON RELAXED (111) SURFACE OF GE

被引:10
作者
CHELIKOWSKY, JR [1 ]
机构
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
来源
PHYSICAL REVIEW B | 1977年 / 15卷 / 06期
关键词
D O I
10.1103/PhysRevB.15.3236
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:3236 / 3242
页数:7
相关论文
共 28 条
[1]   NEW METHOD OF CALCULATING BULK AND SURFACE STATES IN THIN-FILMS [J].
ALLDREDG.GP ;
KLEINMAN, L .
PHYSICAL REVIEW LETTERS, 1972, 28 (19) :1264-&
[2]   SECONDARY RECONSTRUCTION ON SI(100) SURFACE VIA A CHARGE-DENSITY WAVE [J].
APPELBAUM, JA ;
BARAFF, GA ;
HAMANN, DR .
PHYSICAL REVIEW LETTERS, 1976, 36 (08) :450-452
[3]  
APPELBAUM JA, TO BE PUBLISHED
[4]  
APPELBAUM JA, UNPUBLISHED
[5]  
APPELBAUM JA, 1974, PHYSICS SEMICONDUCTO, P681
[6]   TIGHT-BINDING CALCULATIONS OF (111) SURFACE DENSITIES OF STATES OF GE AND GAAS [J].
CHADI, DJ ;
COHEN, ML .
SOLID STATE COMMUNICATIONS, 1975, 16 (06) :691-694
[7]   SPECIAL POINTS IN BRILLOUIN ZONE [J].
CHADI, DJ ;
COHEN, ML .
PHYSICAL REVIEW B, 1973, 8 (12) :5747-5753
[8]  
CHELIKOWSKY JR, 1974, PHYS REV B, V10, P5025
[9]   ELECTRONIC-STRUCTURE OF (111) SURFACE OF SEMICONDUCTORS [J].
CIRACI, S ;
BATRA, IP ;
TILLER, WA .
PHYSICAL REVIEW B, 1975, 12 (12) :5811-5823
[10]   SPECIAL POINTS IN 2-DIMENSIONAL BRILLOUIN ZONE [J].
CUNNINGHAM, SL .
PHYSICAL REVIEW B, 1974, 10 (12) :4988-4994