OBSERVATION OF IMPURITY REDUSTRIBUTION DURING THERMAL OXIDATION OF SILICON USING MOS STRUCTURE

被引：113

作者：

DEAL, BE

GROVE, AS

SNOW, EH

SAH, CT

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1965年 / 112卷 / 03期

关键词：

D O I：

10.1149/1.2423529

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：308 / &

共 21 条

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