RECONSTRUCTING THE STRUCTURAL PROFILE OF A SEMICONDUCTOR OVER THE THICKNESS OF A WAFER FROM PHOTOLUMINESCENCE SPECTRA

被引：0

作者：

MASLOBOEV, YP

SELISHCHEV, SV

TERESHCHENKO, SA

机构：

来源：

SEMICONDUCTORS | 1995年 / 29卷 / 09期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A new noncontact method that depends upon an analysis of the photoluminescence spectra is proposed for studying spatially nonuniform distributions of the material characteristics of semiconductor wafers in microelectronics. As an example, the workability of the proposed method was demonstrated by using numerical modeling to reconstruct the dependence of the band gap on the depth from the surface of a semiconductor wafer. (C) 1995 American Institute of Physics.

引用

页码：801 / 803

页数：3

共 18 条

[1] A method of determining the distribution of photoconductivity and its relaxation time over the semiconductor wafer thickness
O. G. Koshelev
E. A. Guseva
Moscow University Physics Bulletin, 2007, 62 (3) : 193 - 197
[2] A SIMPLE METHOD FOR RECONSTRUCTING THE DENSITY OF STATES OF HEAVILY DOPED SILICON FROM PHOTOLUMINESCENCE SPECTRA
PAN, Y
JOURNAL OF APPLIED PHYSICS, 1991, 70 (02) : 838 - 840
[3] DETERMINATION OF THE STRUCTURAL CHARACTERISTICS OF DISLOCATIONS IN GERMANIUM FROM PHOTOLUMINESCENCE SPECTRA
ISOTOV, AN
KOLUBAKIN, AI
SHEVCHENKO, SA
SHTEIMAN, EA
FIZIKA TVERDOGO TELA, 1993, 35 (10): : 2635 - 2639
[4] Determination of thickness, refractive index, and thickness irregularity for semiconductor thin films from transmission spectra
Aqili, AKS
Maqsood, A
APPLIED OPTICS, 2002, 41 (01) : 218 - 224
[5] Determination of thickness, refractive index, and thickness irregularity for semiconductor thin films from transmission spectra
Aqili, Akram K. S.
Maqsood, Asghari
Applied Optics, 2002, 41 (01): : 218 - 224
[6] The accuracy of reconstructing the semiconductor doping profile from capacitance-voltage characteristics measured during electrochemical etching
I. R. Karetnikova
I. M. Nefedov
V. I. Shashkin
Semiconductors, 2001, 35 : 766 - 772
[7] The accuracy of reconstructing the semiconductor doping profile from capacitance-voltage characteristics measured during electrochemical etching
Karetnikova, IR
Nefedov, IM
Shashkin, VI
SEMICONDUCTORS, 2001, 35 (07) : 766 - 772
[8] Determination of the metal nanometer layer thickness and semiconductor conductivity in metal-semiconductor structures from electromagnetic reflection and transmission spectra
D. A. Usanov
A. V. Skripal
A. V. Abramov
A. S. Bogolyubov
Technical Physics, 2006, 51 : 644 - 649
[9] Determination of the metal nanometer layer thickness and semiconductor conductivity in metal-semiconductor structures from electromagnetic reflection and transmission spectra
Usanov, D. A.
Skripal, A. V.
Abramov, A. V.
Bogolyubov, A. S.
TECHNICAL PHYSICS, 2006, 51 (05) : 644 - 649
[10] Reconstructing photoluminescence spectra at liquid nitrogen temperature from heavily boron-doped regions of crystalline silicon solar cells
Wu, HuiTing
Nguyen, Hieu T.
Liu, AnYao
Macdonald, Daniel
PROGRESS IN PHOTOVOLTAICS, 2018, 26 (08): : 587 - 596

← 1 2 →