WIDEBAND GALLIUM-ARSENIDE POWER MESFET AMPLIFIERS

被引：10
|
作者：
NEIDERT, RE [1 ]
WILLING, HA [1 ]
机构：
[1] USN RES LAB,WASHINGTON,DC 20375
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1976年 / 24卷 / 06期
关键词：
D O I：
10.1109/TMTT.1976.1128853
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：342 / 350
页数：9
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