CAPACITANCE TRANSIENT SPECTROSCOPY OF TRACE CONTAMINATION IN SILICON

被引：48
|
作者：
BENTON, JL
KIMERLING, LC
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 09期
关键词：
D O I：
10.1149/1.2124387
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：2098 / 2102
页数：5
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