MOSFET FABRICATION USING ION-BEAM NITRIDATION

被引：8
|
作者：
TROXELL, JR
机构：
[1] GM, Research Lab, Warren, MI, USA, GM, Research Lab, Warren, MI, USA
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1985年 / 14卷 / 06期
关键词：
ION BEAM NITRIDATION - LOCAL OXIDATION - NITROGEN IMPLANTATION;
D O I：
10.1007/BF02654307
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
(Edited Abstract)
引用
收藏
页码：707 / 728
页数：22
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