DIRECT DETERMINATION OF PROCESS LATITUDE FOR TITANIUM SALICIDE FORMATION

被引：0

作者：

NORMANDON, P ^{[1
]}

BRUN, N ^{[1
]}

BLOSSE, A ^{[1
]}

TISSIER, A ^{[1
]}

机构：

[1] MATRA MHS,F-44087 NANTES 03,FRANCE

来源：

APPLIED SURFACE SCIENCE | 1993年 / 73卷

关键词：

D O I：

10.1016/0169-4332(93)90140-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A new quantitative method is presented to determine the sensitivity of the Ti salicide process to the de-oxidation step before the metal deposition. 0.7 mu m CMOS production-type wafers have been processed for this step in a system allowing controlled chemical oxide bevelling along a wafer diameter. The wafers then went through all the subsequent processing steps of an industrial process including electrical testing. Results obtained on various electrical test patterns are discussed, and information about the salicide process window is presented.

引用

页码：14 / 18

页数：5

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