EPITAXIAL METAL ISLAND FORMATION ON SI(111) BY CLUSTER DEPOSITION FROM A BEAM

被引：3
|
作者：
JONK, P [1 ]
HECTOR, R [1 ]
WITTENBERG, F [1 ]
MEIWESBROER, KH [1 ]
机构：
[1] UNIV ROSTOCK, FACHBEREICH PHYS, O-2500 ROSTOCK 1, GERMANY
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1993年 / 80-1卷
关键词：
D O I：
10.1016/0168-583X(93)90689-4
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Lead clusters are deposited on clean Si(lll) at room temperature. The resulting layers consist of islands and show different crystallization behaviour for big and small clusters. The results are discussed as a consequence of the melting point depression of small supported particles.
引用
收藏
页码：818 / 821
页数：4
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