ION-BEAM MILLING EFFECT ON ELECTRICAL-PROPERTIES OF HG1-XCDXTE

被引：65
|
作者：
BAHIR, G
FINKMAN, E
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 02期
关键词：
D O I：
10.1116/1.576101
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：348 / 353
页数：6
相关论文
共 50 条
  • [1] HG1-XCDXTE DOPING BY ION-BEAM TREATMENT
    IVANOVOMSKII, VI
    MIRONOV, KE
    MYNBAEV, KD
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (05) : 634 - 637
  • [2] ANNEALING AND ELECTRICAL-PROPERTIES OF HG1-XCDXTE GROWN BY OMVPE
    PARAT, KK
    TASKAR, NR
    BHAT, IB
    GHANDHI, SK
    JOURNAL OF CRYSTAL GROWTH, 1990, 106 (04) : 513 - 523
  • [3] STUDY OF MOCVD GROWN HG1-XCDXTE BY ION-BEAM TECHNIQUES
    JOHNSTON, PN
    RUSSO, SP
    ELLIMAN, RG
    PAIN, GN
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 79 (1-4): : 490 - 492
  • [4] Modification of Hg1-xCdxTe and related materials by ion-beam treatment
    Mynbaev, KD
    Ivanov-Omskii, VI
    JOURNAL OF ALLOYS AND COMPOUNDS, 2004, 371 (1-2) : 153 - 156
  • [5] ELECTRICAL-PROPERTIES OF LI-DOPED HG1-XCDXTE(100) BY MOLECULAR-BEAM EPITAXY
    WIJEWARNASURIYA, PS
    SOU, IK
    KIM, YJ
    MAHAVADI, KK
    SIVANANTHAN, S
    BOUKERCHE, M
    FAURIE, JP
    APPLIED PHYSICS LETTERS, 1987, 51 (24) : 2025 - 2027
  • [6] ELECTRICAL-PROPERTIES OF LANGMUIR-BLODGETT PASSIVATION FILM FOR HG1-XCDXTE
    SHIMANOE, K
    SAKASHITA, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (3A): : 1064 - 1067
  • [7] Ion implantation and ion milling in MBE Hg1-xCdxTe films
    Fitsych, O. I.
    Voitsekhovskii, A. V.
    Grigorjev, D. V.
    Mikhailov, N. N.
    Talipov, N. H.
    Mynbaev, K. D.
    Izhnin, I. I.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2012, 272 : 313 - 317
  • [8] ANNEALING EFFECTS ON THE ELECTRICAL-PROPERTIES OF HG1-XCDXTE GROWN BY 2 DIFFERENT TECHNIQUES
    HADY, AAA
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1988, 107 (01): : K25 - K28
  • [9] ELECTRICAL-PROPERTIES AND COMPOSITIONAL DISTRIBUTIONS OF CVT AND PVT GROWN HG1-XCDXTE EPILAYERS
    SHA, YG
    VOLZ, MP
    LEHOCZKY, SL
    JOURNAL OF ELECTRONIC MATERIALS, 1994, 23 (01) : 25 - 29
  • [10] EFFECTS OF MIXED-VALENCE MERCURY AND INDIUM ON THE ELECTRICAL-PROPERTIES OF HG1-XCDXTE
    PAIN, GN
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (04): : 1485 - 1491
12345