TRAP MUTATION IN HE-DOPED ION-IMPLANTED TUNGSTEN

被引:23
|
作者
ELKERIEM, MSA
VANDERWERF, DP
PLEITER, F
机构
[1] Nuclear Solid State Physics, Materials Science Centre, University of Groningen
来源
HYPERFINE INTERACTIONS | 1993年 / 79卷 / 1-4期
关键词
D O I
10.1007/BF00567609
中图分类号
O64 [物理化学(理论化学)、化学物理学]; O56 [分子物理学、原子物理学];
学科分类号
070203 ; 070304 ; 081704 ; 1406 ;
摘要
In this work, we report on an investigation of the defect complexes InVe(2)He(n) in tungsten by means of PAC. The release steps InVe(2)He(n), --> InV2Hen-1 + He were identified for n = 1-5. The dissociation energies, in the range of 2.9-4.5 eV, agree perfectly with the values that have been previously determined by means of THDS. The quadrupole frequency is about 122 Mrad/s for n = 1,2 and about 101 Mrad/s for n = 3,4. These values are smaller than the frequency of the undecorated vacancy (n = 0). The vacancy mutates into a divacancy if it is filled with about 10 He atoms, giving rise to a quadrupole frequency of about 218 Mrad/s. This so-called ''trap mutation'' ultimately leads to bubble information. We observed at least three different bubble-associated quadrupole interactions.
引用
收藏
页码:787 / 791
页数:5
相关论文
共 50 条
  • [1] ION-IMPLANTED POTASSIUM IN TUNGSTEN
    KIM, KT
    WELSCH, G
    MATERIALS LETTERS, 1990, 9 (09) : 295 - 301
  • [2] Ion-implanted deuterium retention in tungsten
    Alimov, V.Kh.
    Zalavutdinov, R.Kh.
    Zakharov, A.P.
    Surface Investigation X-Ray, Synchrotron and Neutron Techniques, 2001, 16 (08): : 1321 - 1329
  • [3] CHANGE OF MICROHARDNESS ON ION-IMPLANTED TUNGSTEN CARBIDE
    KOLITSCH, A
    RICHTER, E
    CRYSTAL RESEARCH AND TECHNOLOGY, 1983, 18 (01) : K5 - K7
  • [4] DIFFUSION OF NITROGEN IN ION-IMPLANTED CHROMIUM AND TUNGSTEN
    KEINONEN, J
    RAISANEN, J
    ANTTILA, A
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 35 (04): : 227 - 232
  • [5] Release of ion-implanted 3He and D from tungsten under subsequent 4He ion irradiation
    Umerenkova, A.
    Harutyunyan, Z.
    Ogorodnikova, O. V.
    Gasparyan, Y.
    Ostojic, N.
    Efimov, V.
    JOURNAL OF NUCLEAR MATERIALS, 2025, 606
  • [6] CAPTURE, REEMISSION AND THERMODESORPTION OF ION-IMPLANTED DEUTERIUM IN TUNGSTEN
    VARAVA, AV
    ZHDANOV, SK
    PISAREV, AA
    IZVESTIYA AKADEMII NAUK SSSR SERIYA FIZICHESKAYA, 1992, 56 (06): : 166 - 172
  • [7] Ion-Implanted Deuterium Accumulation in a Deposited Tungsten Coating
    Bobkov, V. V.
    Onishchenko, A. V.
    Sobol', O. V.
    Starovoitov, R. I.
    Kovtunenko, Yu I.
    Logachev, Yu E.
    Tishchenko, L. P.
    JOURNAL OF SURFACE INVESTIGATION-X-RAY SYNCHROTRON AND NEUTRON TECHNIQUES, 2010, 4 (05) : 852 - 858
  • [8] Ion-implanted deuterium accumulation in a deposited tungsten coating
    V. V. Bobkov
    A. V. Onishchenko
    O. V. Sobol’
    R. I. Starovoitov
    Yu. I. Kovtunenko
    Yu. E. Logachev
    L. P. Tishchenko
    Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques, 2010, 4 : 852 - 858
  • [9] ION-IMPLANTED STRUCTURES AND DOPED LAYERS IN DIAMOND
    PRINS, JF
    MATERIALS SCIENCE REPORTS, 1992, 7 (7-8): : 271 - 364
  • [10] Annealing effects on the photoluminescence of Pb-ion irradiated He-doped sapphire
    Yin Song
    ChongHong Zhang
    DeYan He
    LiQing Zhang
    Jie Gou
    YiTao Yang
    JianJian Li
    Science China Physics, Mechanics and Astronomy, 2012, 55 : 1803 - 1807