INFLUENCE OF THE DEGREE OF DOPING OF A SEMICONDUCTOR ON THE REDISTRIBUTION OF BORON IN SILICON AS A RESULT OF HIGH-TEMPERATURE PROTON IRRADIATION

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作者：
KOZLOVSKII, VV
LOMASOV, VN
GURYANOV, GM
KOVARSKII, AP
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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1982年 / 16卷 / 11期
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O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：1350 / 1351
页数：2
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