THE FORMATION OF 2 ALUMINUM SEMICONDUCTOR INTERFACES - A TEMPERATURE-DEPENDENT STUDY

被引：4
|
作者：
STEPHENS, C
MCGOVERN, IT
MCLEAN, AB
BRAUN, W
机构：
[1] UNIV WALES UNIV COLL CARDIFF,DEPT PHYS,CARDIFF CF1 1XL,S GLAM,WALES
[2] BERLINER ELEKTR SPEICHERRING GESCHELL SYNCROTRONSTHRAHLUNG MBH,D-1000 BERLIN 33,FED REP GER
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 04期
关键词：
D O I：
10.1116/1.584258
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1326 / 1330
页数：5
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