SILICON ON SAPPHIRE FOR ION-IMPLANTATION STUDIES

被引:0
|
作者
GROSS, C [1 ]
PISCIOTT.BP [1 ]
机构
[1] LANGLEY RES CTR,HAMPTON,VA
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:8 / 8
页数:1
相关论文
共 50 条
  • [1] ION-IMPLANTATION IN SILICON FILMS ON SAPPHIRE
    EKLUND, KH
    HOLMEN, G
    PETERSTROM, S
    APPLIED PHYSICS LETTERS, 1974, 24 (06) : 283 - 284
  • [2] IMMA APPLICATIONS TO ION-IMPLANTATION IN SILICON-ON-SAPPHIRE
    PANCHOLY, RK
    YOUNG, MYT
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (12) : 2256 - 2261
  • [3] CARRIER LIFETIME VERSUS ION-IMPLANTATION DOSE IN SILICON ON SAPPHIRE
    DOANY, FE
    GRISCHKOWSKY, D
    CHI, CC
    APPLIED PHYSICS LETTERS, 1987, 50 (08) : 460 - 462
  • [4] Optical studies of ion-implantation centres in silicon
    Davies, G
    Harding, R
    Jin, T
    Mainwood, A
    Leung-Wong, J
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2002, 186 (1-4): : 1 - 9
  • [5] COLORATION OF SAPPHIRE BY CO ION-IMPLANTATION
    SAITO, Y
    HORIE, H
    SUGANOMATA, S
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 59 : 1173 - 1176
  • [6] OPTICAL-ABSORPTION STUDIES OF ION-IMPLANTATION DAMAGE IN SI ON SAPPHIRE
    ZAMMIT, U
    MADHUSOODANAN, KN
    MARINELLI, M
    SCUDIERI, F
    PIZZOFERRATO, R
    MERCURI, F
    WENDLER, E
    WESCH, W
    PHYSICAL REVIEW B, 1994, 49 (20): : 14322 - 14330
  • [7] CHARACTERIZATION OF INSULATING REGIONS CREATED IN SILICON ON SAPPHIRE BY HIGH DOSE ION-IMPLANTATION
    JAMBA, DM
    WILSON, RG
    HARARI, E
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (08) : C257 - C257
  • [8] LATTICE IMAGES OF DEFECT-FREE SILICON ON SAPPHIRE PREPARED BY ION-IMPLANTATION
    PARKER, MA
    SINCLAIR, R
    SIGMON, TW
    APPLIED PHYSICS LETTERS, 1985, 47 (06) : 626 - 628
  • [9] ION-IMPLANTATION OF POROUS SILICON
    PENG, C
    FAUCHET, PM
    REHM, JM
    MCLENDON, GL
    SEIFERTH, F
    KURINEC, SK
    APPLIED PHYSICS LETTERS, 1994, 64 (10) : 1259 - 1261
  • [10] AMORPHIZATION OF SILICON BY ION-IMPLANTATION
    DENNIS, JR
    HALE, EB
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1976, 21 (03): : 408 - 408