FREE CARRIER PROFILE SYNTHESIS IN MOCVD GROWN GAAS BY ATOMIC-PLANE DOPING

被引：8
|
作者：
OHNO, H
IKEDA, E
HASEGAWA, H
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 06期
关键词：
D O I：
10.1143/JJAP.23.L369
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：L369 / L370
页数：2
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