SHORT-CHANNEL THRESHOLD-MODEL FOR BURIED-CHANNEL MOSFETS

被引：0

作者：

HUANG, JST

SCHRANKLER, JW

KUENG, JS

机构：

[1] HONEYWELL INC,DIV SOLID STATE ELECTR,MINNEAPOLIS,MN 55413

[2] UNIV MINNESOTA,DEPT ELECT ENGN,MINNEAPOLIS,MN 55455

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1984年 / 31卷 / 12期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1888 / 1895

页数：8

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