EFFECT OF HEAT-TREATMENT ON THE CRYSTALLINE QUALITY OF ZNSE EPILAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

被引：3
|
作者：
YODO, T [1 ]
YAMASHITA, K [1 ]
机构：
[1] NIPPON SHEET GLASS CO LTD,TSUKUBA RES LAB,TSUKUBA,IBARAKI 30026,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1988年 / 27卷 / 05期
关键词：
D O I：
10.1143/JJAP.27.L903
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：L903 / L905
页数：3
相关论文
共 50 条
  • [1] GROWTH AND DOPING OF ZNTE AND ZNSE EPILAYERS WITH METALORGANIC VAPOR-PHASE EPITAXY
    WOLF, K
    STANZL, H
    NAUMOV, A
    WAGNER, HP
    KUHN, W
    HAHN, B
    GEBHARDT, W
    JOURNAL OF CRYSTAL GROWTH, 1994, 138 (1-4) : 412 - 417
  • [2] INCORPORATION OF NITROGEN IN ZNSE GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
    HOFFMANN, A
    HEITZ, R
    LUMMER, B
    FRICKE, C
    KUTZER, V
    BROSER, I
    TAUDT, W
    GLEITSMANN, G
    HEUKEN, M
    JOURNAL OF CRYSTAL GROWTH, 1994, 138 (1-4) : 379 - 384
  • [3] STUDY OF MERCURY CADMIUM TELLURIDE EPILAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
    RACCAH, PM
    GARLAND, JW
    ZHANG, Z
    LEE, U
    UGUR, S
    MIOC, S
    GHANDI, SK
    BHAT, I
    JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) : 2014 - 2017
  • [4] THERMOELASTIC STRAIN IN ZNSE FILMS GROWN ON GAAS BY METALORGANIC VAPOR-PHASE EPITAXY
    SHIBATA, N
    OHKI, A
    ZEMBUTSU, S
    KATSUI, A
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (04): : L487 - L489
  • [5] ZNMGSSE/ZNSSE/ZNSE-HETEROSTRUCTURES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
    SOLLNER, J
    SCHMORANZER, J
    HAMADEH, H
    BOLLIG, B
    KUBALEK, E
    HEUKEN, M
    JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (11) : 1557 - 1561
  • [6] HOMOGENEITY OF ZNSSE/ZNSE MULTIQUANTUM WELLS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
    SOLLNER, J
    SCHOLL, M
    SCHMORANZER, J
    WAHID, A
    HEUKEN, M
    WOITOK, J
    HERMANS, J
    SCHIFFERS, W
    GEURTS, J
    JOURNAL OF CRYSTAL GROWTH, 1994, 145 (1-4) : 609 - 615
  • [7] PHOTOASSISTED METALORGANIC VAPOR-PHASE EPITAXY OF ZNSE ON GAAS
    BOUREE, JE
    HELBING, R
    KUHN, W
    GOROCHOV, O
    APPLIED SURFACE SCIENCE, 1995, 86 (1-4) : 437 - 441
  • [8] PHOTOLUMINESCENCE TOPOGRAPHY OF SHALLOW IMPURITIES IN GAAS EPILAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
    WANG, ZM
    AS, DJ
    WINDSCHEIF, J
    BACHEM, KH
    JANTZ, W
    APPLIED PHYSICS LETTERS, 1992, 60 (13) : 1609 - 1611
  • [9] DEPENDENCE OF SOURCE GAS MOLE RATIO ON CRYSTALLINE QUALITY OF ZNSE LAYERS GROWN ON (100) ZNSE SUBSTRATES BY ATMOSPHERIC-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY
    YODO, T
    KOYAMA, T
    YAMASHITA, K
    JOURNAL OF CRYSTAL GROWTH, 1988, 92 (1-2) : 196 - 207
  • [10] Crystalline structure of ZnSe and ZnSSe epilayers grown on (100)GaAs by metalorganic vapour-phase epitaxy
    Lovergine, N
    Prete, P
    Tapfer, L
    Mancini, AM
    JOURNAL OF CRYSTAL GROWTH, 2000, 214 : 187 - 191
12345