MOCVD OF HIGH-QUALITY YBA2CU3O7-DELTA THIN-FILMS USING A FLUORINATED BARIUM PRECURSOR

被引:31
|
作者
RICHARDS, BC
COOK, SL
PINCH, DL
ANDREWS, GW
LENGELING, G
SCHULTE, B
JURGENSEN, H
SHEN, YQ
VASE, P
FRELTOFT, T
SPEE, CIMA
LINDEN, JL
HITCHMAN, ML
SHAMLIAN, SH
BROWN, A
机构
[1] AIXTRON GMBH,D-52072 AACHEN,GERMANY
[2] NKT RES CTR,DK-2605 BRONDBY,DENMARK
[3] TNO,TPD,5600 AN EINDHOVEN,NETHERLANDS
[4] UNIV STRATHCLYDE,DEPT PURE & APPL CHEM,GLASGOW G1 1XL,LANARK,SCOTLAND
[5] MATS UK LTD,LIVERPOOL L7 9PG,MERSEYSIDE,ENGLAND
来源
PHYSICA C | 1995年 / 252卷 / 3-4期
关键词
D O I
10.1016/0921-4534(95)00441-6
中图分类号
O59 [应用物理学];
学科分类号
摘要
MOCVD of superconducting YBa2Cu3O7-delta thin films using the novel fluorinated barium beta-diketonate complex [Ba(TDFND)(2) . tetraglyme](1) in combination with [Y(TMHD)(3)](2) and [Cu(TMHD)(2)] is reported. The Ba complex has a low melting point (72 degrees C), is thermally stable to 200 degrees C and allows reproducible and reliable film deposition even when maintained at 145 degrees C for several weeks, Conversion of the fluoride to the oxide is achieved by in situ hydrolysis. Films deposited on SrTiO3 (100) were characterised by scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction, rocking curve, ac susceptibility and secondary ion mass spectrometry. Homogeneous layers of YBa2Cu3O7-delta, similar to 0.25 mu m thick, were grown at similar to 0.13 mu m h(-1). The films are epitaxial with good c axis orientatior. Critical temperatures T-c are typically 91 K and critical current densities J(c) (at 77 K) of similar to 5 MA cm(-2) are reported, SIMS results showing levels of residual fluorine do not exceed 250 ppm.
引用
收藏
页码:229 / 236
页数:8
相关论文
共 50 条
  • [1] MOCVD of high quality YBa2Cu3O7-delta thin films using a fluorinated barium precursor
    Richards, BC
    Cook, SL
    Pinch, DL
    Andrews, GW
    Lengeling, G
    Schulte, B
    Jurgensen, H
    Shen, YQ
    Vase, P
    Freltoft, T
    Spee, CIMA
    Linden, JL
    Hitchman, ML
    Shamlian, SH
    Brown, A
    APPLIED SUPERCONDUCTIVITY 1995, VOLS. 1 AND 2: VOL 1: PLENARY TALKS AND HIGH CURRENT APPLICATIONS; VOL 2: SMALL SCALE APPLICATIONS, 1995, 148 : 891 - 894
  • [2] MOCVD OF HIGH-QUALITY YBA2CU3O7-DELTA THIN-FILMS USING NOVEL FLUORINATED AND NON-FLUORINATED PRECURSORS
    RICHARDS, BC
    COOK, SL
    PINCH, DL
    ANDREWS, GW
    JOURNAL DE PHYSIQUE IV, 1995, 5 (C5): : 407 - 414
  • [3] COEXISTENCE OF GRAINS WITH DIFFERING ORTHORHOMBICITY IN HIGH-QUALITY YBA2CU3O7-DELTA THIN-FILMS
    DEOBALDIA, EI
    LUDWIG, KF
    BERKOWITZ, SJ
    CLARK, AM
    SKOCPOL, WJ
    MANKIEWICH, PM
    RUDMAN, DA
    ROSHKO, A
    MOERMAN, R
    VALE, L
    ONO, RH
    APPLIED PHYSICS LETTERS, 1994, 65 (26) : 3395 - 3397
  • [4] THIN-FILMS OF YBA2CU3O7-DELTA PREPARED BY A NEW MOCVD TECHNIQUE
    SCHULTE, B
    MAUL, M
    BECKER, W
    ELSCHNER, S
    SCHLOSSER, EG
    HAUSSLER, P
    ADRIAN, H
    PHYSICA C, 1991, 185 : 2005 - 2006
  • [5] MAGNETOCONDUCTIVITY IN YBA2CU3O7-DELTA THIN-FILMS
    HOLM, W
    RAPP, O
    JOHNSON, CNL
    HELMERSSON, U
    PHYSICAL REVIEW B, 1995, 52 (05): : 3748 - 3755
  • [6] MOCVD OF HIGH-QUALITY YBA2CU3O7-DELTA FILMS - IN-SITU PREPARATION OF FLUORINE-FREE LAYERS FROM A FLUORINATED BARIUM SOURCE
    WATSON, IM
    ATWOOD, MP
    CARDWELL, DA
    CUMBERBATCH, TJ
    JOURNAL OF MATERIALS CHEMISTRY, 1994, 4 (09) : 1393 - 1401
  • [7] HIGH-QUALITY CRYSTALLINE YBA2CU3O7-DELTA FILMS ON THIN SILICON SUBSTRATES
    HAAKENAASEN, R
    FORK, DK
    GOLOVCHENKO, JA
    APPLIED PHYSICS LETTERS, 1994, 64 (12) : 1573 - 1575
  • [8] FORMATION AND CHARACTERIZATION OF YBA2CU3O7-DELTA HIGH-T(C) THIN-FILMS BY MOCVD WITH SINGLE MIXED PRECURSOR
    MENG, GY
    ZHOU, G
    SCHNEIDER, R
    SARMA, BK
    LEVY, M
    PHYSICA C, 1993, 214 (3-4): : 297 - 306
  • [9] NOX SENSOR USING YBA2CU3O7-DELTA THIN-FILMS
    KUDO, S
    OHNISHI, H
    MATSUMOTO, T
    IPPOMMATSU, M
    SENSORS AND ACTUATORS B-CHEMICAL, 1995, 23 (2-3) : 219 - 222
  • [10] HIGH-QUALITY YBA2CU3O7-X SUPERCONDUCTING THIN-FILMS GROWN BY MOCVD
    DUBOURDIEU, C
    SENATEUR, JP
    THOMAS, O
    WEISS, F
    JOURNAL DE PHYSIQUE IV, 1995, 5 (C5): : 365 - 371