EFFECT OF TEMPERATURE + BIAS ON GLASS-SILICON INTERFACES

被引:53
作者
KERR, DR
机构
关键词
D O I
10.1147/rd.84.0385
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
引用
收藏
页码:385 / &
相关论文
共 16 条
[1]   ELECTRODE CONTROL OF SIO2-PASSIVATED PLANAR JUNCTIONS [J].
CASTRUCCI, PP ;
LOGAN, JS .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) :394-&
[2]  
FEUERSANGER AE, 1963, IEEE T ELECTRON DEVI, VED10, P143
[4]   STABILIZATION OF SIO2 PASSIVATION LAYERS WITH P2O5 [J].
KERR, DR ;
LOGAN, JS ;
BURKHARDT, PJ ;
PLISKIN, WA .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) :376-&
[5]   CALCULATION OF THE SPACE CHARGE, ELECTRIC FIELD, AND FREE CARRIER CONCENTRATION AT THE SURFACE OF A SEMICONDUCTOR [J].
KINGSTON, RH ;
NEUSTADTER, SF .
JOURNAL OF APPLIED PHYSICS, 1955, 26 (06) :718-720
[6]   SEMICONDUCTOR SURFACE VARACTOR [J].
LINDNER, R .
BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (03) :803-+
[7]  
PERRI JA, 1961, OCT EL SOC SEM S
[8]   NONDESTRUCTIVE DETERMINATION OF THICKNESS + REFRACTIVE INDEX OF TRANSPARENT FILMS [J].
PLISKIN, WA ;
CONRAD, EE .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (01) :43-&
[9]  
PLISKIN WA, 1964, ELECTROCHEM TECHNOL, V2, P196
[10]   SPACE-CHARGE DEVELOPMENT IN GLASS [J].
PROCTOR, TM ;
SUTTON, PM .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1960, 43 (04) :173-179