GROWTH OF SINGLE-CRYSTALS OF CDXHG1-XTE BY CASTING PERPENDICULAR TO THE AMPOULE AXIS - A TEMPERATURE-GRADIENT RECRYSTALLIZE - ANNEAL TECHNIQUE

被引：2

作者：

VANKHAI, N ^{[1
]}

NOWAK, Z ^{[1
]}

PIOTROWSKI, J ^{[1
]}

机构：

[1] MIL ACAD TECHNOL,INST TECH PHYS,WARSAW,POLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1985年 / 73卷 / 03期

关键词：

D O I：

10.1016/0022-0248(85)90018-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：537 / 542

页数：6

共 30 条

[1] IMPURITY DEFECTS IN CDXHG1-XTE SINGLE-CRYSTALS
FILATOV, AV
NEVSKII, OB
KAGAN, NB
KRAPUKHIN, VV
KHOLINA, EN
SUSOV, EV
KRISTALLOGRAFIYA, 1988, 33 (05): : 1232 - 1238
[2] PHOTOELECTRIC AND NOISE PROPERTIES OF PLASTICALLY DEFORMED CDXHG1-XTE SINGLE-CRYSTALS
ANDRUKHIV, MG
VIRT, IS
TSYUTSYURA, DI
SHUPTAR, DD
SHKUMBATYUK, PS
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (07): : 787 - 788
[3] CORRELATION BETWEEN STRUCTURAL AND CHEMICAL INHOMOGENEITY OF SINGLE-CRYSTALS OF CDXHG1-XTE
KRYSHTAB, TG
RARENKO, IM
GAVRILYUK, YN
DATSENKO, LI
LYUBCHENKO, AV
UKRAINSKII FIZICHESKII ZHURNAL, 1980, 25 (02): : 296 - 301
[4] SOLID-PHASE LASER DOPING OF CDXHG1-XTE SINGLE-CRYSTALS
VIRT, IS
KUZMA, MS
SHEREGII, EM
SHKUMBATYUK, PS
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1992, 26 (03): : 320 - 321
[5] EFFECT OF A DIELECTRIC FILM ON THE PHOTOSENSITIVITY SPECTRA OF CDXHG1-XTE SINGLE-CRYSTALS
AGAMIROVA, LM
MOVSUMZADE, AA
ZAPOROZHCHENKO, VI
RAKHOVSKII, VI
INORGANIC MATERIALS, 1991, 27 (03) : 532 - 533
[6] ABSORPTION-SPECTRA OF CDXHG1-XTE SINGLE-CRYSTALS AT LOW-TEMPERATURES
NESMELOVA, IM
PANASENKO, ZK
BARYSHEV, NS
AVERYANOV, IS
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (07): : 739 - 741
[7] POSITRON-ANNIHILATION IN PLASTICALLY AND ELASTICALLY DEFORMED PARTS OF CDXHG1-XTE SINGLE-CRYSTALS
ANDERSEN, GY
DYAKIN, VV
ZAITOV, FA
KOVAL, VV
LYUBCHENKO, AV
SILANTEV, VI
FEDCHENKO, RG
INORGANIC MATERIALS, 1987, 23 (08) : 1149 - 1152
[8] CHARACTERISTICS OF ELECTROPHYSICAL AND PHOTOELECTRIC PROPERTIES OF CDXHG1-XTE SINGLE-CRYSTALS SUBJECTED TO LASER IRRADIATION
VIRT, IS
LYUBCHENKO, AV
MOZOL, PE
GNATYUK, VA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (08): : 862 - 864
[9] CHARACTERISTICS OF THE BEHAVIOR OF INDIUM IMPLANTED IN N-TYPE CDXHG1-XTE SINGLE-CRYSTALS
AKHMEDOVA, FI
BARYSHEV, NS
IBRAGIMOVA, MI
KHAIBULLIN, IB
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (03): : 353 - 354
[10] COMPOSITIONAL VARIATIONS OF THE NONRESONANT INTERBAND FARADAY-ROTATION IN CDXHG1-XTE SINGLE-CRYSTALS
KOUBELE, V
ZVARA, M
HLIDEK, P
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1983, 120 (02): : K173 - K177

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