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- [2] DETECTION OF A HENRY CONSTANT IN CRYSTALLIZATION PROCESSES FROM A GAS-PHASE OF AN ALLOYING EPITAXIAL LAYER OF SILICON WITH PHOSPHORUS AND ARSENIC ZHURNAL FIZICHESKOI KHIMII, 1973, 47 (01): : 236 - 237
- [3] INVESTIGATION OF KINETICS OF CRYSTALLIZATION OF EPITAXIAL SIC LAYERS FROM GAS-PHASE KRISTALLOGRAFIYA, 1975, 20 (05): : 1004 - &
- [4] CHARACTERISTICS OF THE GROWTH OF SILICON-CARBIDE EPITAXIAL LAYERS FROM GAS-PHASE PRODUCED BY MAGNETOTRON REACTIVE SPUTTERING PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1994, 20 (07): : 51 - 54
- [5] Application of triethylstibine for the alloying of silicon epitaxial layers PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1995, 21 (05): : 76 - 78
- [6] Use of triethylgallium for the alloying of silicon epitaxial layers PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1996, 22 (23): : 1 - 3
- [10] EQUIPMENT FOR LAYERS PRECIPITATION FROM GAS-PHASE KHIMICHESKAYA FIZIKA, 1992, 11 (10): : 1406 - 1413