MODELING OF GAAS-MESFET OUTPUT CONDUCTANCE AND TRANSCONDUCTANCE FREQUENCY DISPERSION

被引：0

作者：

YUAN, JS

机构：

[1] Deparment of Electrical Engineering, University of Central Florida, Orlando, FL

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1993年 / 74卷 / 01期

关键词：

D O I：

10.1080/00207219308925812

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The output conductance and transconductance frequency dispersion phenomena of a GaAs MESFET have been modelled. A non-uniform temperature distribution between the substrate and surface channel is accounted for. Experimental data are used to justify the accuracy of the present model. Good agreement between the model prediction and measurement has been obtained. The output conductance and transconductance frequency dispersion has a significant impact in determining the small-signal voltage gain of a MESFET amplifier.

引用

页码：51 / 58

页数：8

共 50 条

[1] Characterization of the frequency dispersion of transconductance and drain conductance of GaAs MESFET
Hasumi, Y
Matsunaga, N
Oshima, T
Kodera, H
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (10) : 2032 - 2038
[2] Numerical analysis of frequency dispersion of transconductance in GaAs MESFET's
Lo, SH
Lee, CP
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (02) : 213 - 219
[3] MODELING FREQUENCY-DEPENDENCE OF GAAS-MESFET CHARACTERISTICS
CONGER, J
PECZALSKI, A
SHUR, MS
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1994, 29 (01) : 71 - 76
[4] MODELING OF GUNN DOMAIN EFFECTS IN THE OUTPUT CONDUCTANCE OF THE HIGH-FREQUENCY SMALL-SIGNAL GAAS-MESFET EQUIVALENT-CIRCUIT
MAGERKO, MA
CHANG, K
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 1992, 5 (14) : 748 - 752
[5] SUBMICROMETER GAAS-MESFET WITH SHALLOW CHANNEL AND VERY HIGH TRANSCONDUCTANCE
VANZEGHBROECK, BJ
PATRICK, W
MEIER, H
VETTIGER, P
IEEE ELECTRON DEVICE LETTERS, 1987, 8 (03) : 118 - 120
[6] EXPERIMENTAL CORRELATION BETWEEN SUBSTRATE PROPERTIES AND GAAS-MESFET TRANSCONDUCTANCE
WANG, FC
BUJATTI, M
IEEE ELECTRON DEVICE LETTERS, 1984, 5 (06) : 188 - 190
[7] Analysis of the frequency dispersion of transconductance and drain conductance in GaAs MESFETs
Hasumi, Y
Oshima, T
Matsunaga, N
Kodera, H
ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS, 2006, 89 (04): : 20 - 28
[8] Investigation of low frequency dependence of output conductance in GaAs MESFET
Khoualdia, A.
Hadjoub, Z.
Doghmane, A.
INTERNATIONAL JOURNAL OF NANOELECTRONICS AND MATERIALS, 2010, 3 (01): : 9 - 15
[9] GAAS-MESFET MODELING AND NONLINEAR CAD
CURTICE, WR
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1988, 36 (02) : 220 - 230
[10] OPTICALLY FREQUENCY MODULATED GAAS-MESFET OSCILLATOR
LORIOU, B
GUENA, J
SAUTEREAU, JF
ELECTRONICS LETTERS, 1981, 17 (24) : 901 - 902

← 1 2 3 4 5 →