ELECTROABSORPTION AND MODULATOR CHARACTERISTICS OF INGAASP MULTIPLE-QUANTUM-WELL LASER STRUCTURES GROWN BY LASER-ASSISTED METALORGANIC MOLECULAR-BEAM EPITAXY

Optical and electroabsorption characteristics are reported of InGaAsP/InGaAsP multiple quantum wells (MQWs) grown by laser-assisted metalorganic molecular beam epitaxy. The argon laser beam is only irradiated during InGaAsP well layer growths in the MQWs and the photoluminescence (PL) peak ranges from 1.3 to 1.5 mum by changing the laser irradiation time. The PL intensities in the irradiated areas are close to that in the nonirradiated area. A clear quantum-confined Stark effect is observed in a p-i-n double heterostructure with the MQWs and the photocurrent peak shifts from 1.49 mum at 0 V to 1.54 mum at - 4 V. For 1.55 mum light, the extinction ratio is - 15 dB at 2.5 V for a 300 mum long modulator.