HOT-ELECTRON ENERGY RELAXATION RATES IN GAAS/GAAIAS QUANTUM WELLS

被引:34
|
作者
BALKAN, N
RIDLEY, BK
EMENY, M
GOODRIDGE, I
机构
关键词
D O I
10.1088/0268-1242/4/10/004
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:852 / 857
页数:6
相关论文
共 50 条
  • [1] HOT-ELECTRON RELAXATION IN GAAS QUANTUM WELLS
    YANG, CH
    CARLSONSWINDLE, JM
    LYON, SA
    WORLOCK, JM
    PHYSICAL REVIEW LETTERS, 1985, 55 (21) : 2359 - 2361
  • [2] HOT-ELECTRON RELAXATION IN GAAS QUANTUM WELLS
    DASSARMA, S
    JAIN, JK
    JALABERT, R
    PHYSICAL REVIEW B, 1988, 37 (03): : 1228 - 1230
  • [3] SUBPICOSECOND LUMINESCENCE STUDY OF HOT-ELECTRON RELAXATION IN GAAS QUANTUM WELLS
    WISE, FW
    TANG, CL
    SOLID STATE COMMUNICATIONS, 1989, 69 (08) : 821 - 826
  • [4] HOT-ELECTRON ENERGY AND MOMENTUM RELAXATION IN GAAS/ALAS AND GAAS/GA1-XALXAS MULTIPLE-QUANTUM WELLS
    OZTURK, E
    STRAW, A
    BALKAN, N
    SUPERLATTICES AND MICROSTRUCTURES, 1994, 15 (02) : 165 - 169
  • [5] HOT-ELECTRON ENERGY RELAXATION RATES IN A HGCDTE SUPERLATTICE
    ECHTERNACH, PM
    FRIEDMAN, LJ
    GOULD, CM
    BOZLER, HM
    CHEUNG, JT
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 : 761 - 762
  • [6] HOT-ELECTRON TRANSPORT IN GAAS QUANTUM-WELLS - NONDRIFTING HOT PHONONS
    BALKAN, N
    GUPTA, R
    DANIELS, ME
    RIDLEY, BK
    EMENY, M
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1990, 5 (09) : 986 - 990
  • [7] RELAXATION OF HOT-ELECTRON DISTRIBUTIONS IN GAAS
    KIM, CS
    SHIZGAL, B
    PHYSICAL REVIEW B, 1991, 44 (07): : 2969 - 2978
  • [8] Effect of nonequilibrium phonons on hot-electron spin relaxation in n-type GaAs quantum wells
    Zhang, P.
    Wu, M. W.
    EPL, 2010, 92 (04)
  • [9] HOT-ELECTRON DISTRIBUTION AND TRANSPORT IN ALGAAS/GAAS/ALGAAS QUANTUM WELLS
    MAKIYAMA, K
    INOUE, M
    ASHIDA, M
    CHO, Y
    IWAI, Y
    SASA, S
    HIYAMIZU, S
    SOLID-STATE ELECTRONICS, 1988, 31 (3-4) : 371 - 374
  • [10] HOT-ELECTRON TRANSPORT IN QUANTUM WELLS
    INOUE, M
    SUPERLATTICES AND MICROSTRUCTURES, 1985, 1 (05) : 433 - 440