SURFACE RELAXATION KINETICS AND GROWTH INTERRUPTION EFFECTS IN GAAS/ALAS SINGLE QUANTUM-WELLS

被引：5
|
作者：
YOSHINAGA, A [1 ]
MOOKHERJEE, P [1 ]
MURRAY, R [1 ]
NEAVE, JH [1 ]
JOYCE, BA [1 ]
机构：
[1] UNIV LONDON IMPERIAL COLL SCI TECHNOL & MED,INTERDISCIPLINARY RES CTR SEMICOND MAT,LONDON SW7 2BZ,ENGLAND
来源：
JOURNAL OF CRYSTAL GROWTH | 1993年 / 127卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(93)90733-D
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
A systematic investigation of growth interruption in molecular beam epitaxial growth has been carried out. From an analysis of the recovery of the reflection high energy electron diffraction (RHEED) specular beam, the growth rate is found to affect both the absolute value of the time constant of the recovery and the activation energy which is derived from this time constant at different temperatures. Using optimized growth conditions we have performed a systematic optical investigation of GaAs/AlAs single quantum wells with and without growth interruption and conclude that growth interruption of the inverted interface (GaAs on AlAs) is the most important factor in the formation of high quality single quantum wells.
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收藏
页码：788 / 792
页数：5
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