GAAS 1 KBIT STATIC RAM WITH SELF-ALIGNED FET TECHNOLOGY

被引：4
|
作者：
ASAI, K
KURUMADA, K
HIRAYAMA, M
OHMORI, M
机构：
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1984年 / 19卷 / 02期
关键词：
D O I：
10.1109/JSSC.1984.1052127
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：260 / 262
页数：3
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