STUDY OF III-V SEMICONDUCTOR BAND-STRUCTURE BY SYNCHROTRON PHOTOEMISSION

被引:19
|
作者
WILLIAMS, GP
CERRINA, F
ANDERSON, J
LAPEYRE, GJ
SMITH, RJ
HERMANSON, J
KNAPP, JA
机构
来源
PHYSICA B & C | 1983年 / 117卷 / MAR期
关键词
D O I
10.1016/0378-4363(83)90525-9
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:350 / 352
页数:3
相关论文
共 50 条
  • [1] STUDY OF III-V SEMICONDUCTOR BAND STRUCTURE BY SYNCHROTRON PHOTOEMISSION.
    Williams, G.P.
    Cerrina, F.
    Anderson, J.
    Lapeyre, G.J.
    Smith, R.J.
    Hermanson, J.
    Knapp, J.A.
    Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics, 1982, 117-118 (Pt I): : 350 - 352
  • [2] Computational band-structure engineering of III-V semiconductor alloys
    Geller, CB
    Wolf, W
    Picozzi, S
    Continenza, A
    Asahi, R
    Mannstadt, W
    Freeman, AJ
    Wimmer, E
    APPLIED PHYSICS LETTERS, 2001, 79 (03) : 368 - 370
  • [3] VELOCITY-FIELD CHARACTERISTICS OF III-V SEMICONDUCTOR ALLOYS - BAND-STRUCTURE INFLUENCES
    KRISHNAMURTHY, S
    SHER, A
    CHEN, AB
    JOURNAL OF APPLIED PHYSICS, 1987, 61 (04) : 1475 - 1479
  • [4] EFFECTS OF ORDERING ON THE BAND-STRUCTURE OF III-V SEMICONDUCTORS
    TENG, D
    SHEN, J
    NEWMAN, KE
    GU, BL
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1991, 52 (09) : 1109 - 1128
  • [5] BAND-STRUCTURE OF III-V AND II-VI SUPERLATTICES
    BERROIR, JM
    BRUM, JA
    SUPERLATTICES AND MICROSTRUCTURES, 1987, 3 (03) : 239 - 245
  • [6] Comprehensive comparison and experimental validation of band-structure calculation methods in III-V semiconductor quantum wells
    Zerveas, George
    Caruso, Enrico
    Baccarani, Giorgio
    Czornomaz, Lukas
    Daix, Nicolas
    Esseni, David
    Gnani, Elena
    Gnudi, Antonio
    Grassi, Roberto
    Luisier, Mathieu
    Markussen, Troels
    Osgnach, Patrik
    Palestri, Pierpaolo
    Schenk, Andreas
    Selmi, Luca
    Sousa, Marilyne
    Stokbro, Kurt
    Visciarelli, Michele
    SOLID-STATE ELECTRONICS, 2016, 115 : 92 - 102
  • [7] GEOMETRY AND ELECTRONIC BAND-STRUCTURE OF AN ORDERED MONOLAYER DEPOSITION OF BI ON III-V(110) SEMICONDUCTOR SURFACES
    UMERSKI, A
    SRIVASTAVA, GP
    PHYSICAL REVIEW B, 1995, 51 (04): : 2334 - 2346
  • [8] RELATIONSHIP BETWEEN DONOR DEFECTS AND BAND-STRUCTURE IN III-V ALLOYS
    MAUGER, A
    BOURGOIN, JC
    PHYSICAL REVIEW B, 1992, 46 (19) : 12278 - 12288
  • [9] Modeling approaches for band-structure calculation in III-V FET quantum wells
    Caruso, E.
    Zerveas, G.
    Baccarani, G.
    Czornomaz, L.
    Daix, N.
    Esseni, D.
    Gnani, E.
    Gnudi, A.
    Grassi, R.
    Luisier, M.
    Markussen, T.
    Palestri, P.
    Schenk, A.
    Selmi, L.
    Sousa, M.
    Stokbro, K.
    Visciarelli, M.
    2015 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS), 2015, : 101 - 104
  • [10] Band structure of III-V ternary semiconductor alloys beyond the VCA
    Bechiri, A
    Benmakhlouf, F
    Bouarissa, N
    MATERIALS CHEMISTRY AND PHYSICS, 2003, 77 (02) : 507 - 510